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On September 20, 2024
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Samsung starts mass producing its fastest SSD to date -- PM9E1 Gen 5 M.2 drive with speeds up to 14.5 GB/s
The PM9E1 is rated for 2,400 TBW (Terabytes written) in its lifespan, which is twice the 1,200 TBW of its predecessor, the PM9A1 Samsung has revealed that its PM9E1 NVMe Gen 5 SSD has started mass production after being announced late last month. The news came in a since-removed blog post, which was republished on TechPowerUp. The Samsung PM9E1 SSD is a successor to the NVMe Gen 4 Samsung PM9A1 launched in April 2021, and more than doubles both read speed and write speed. Additionally, the durability rating (TBW, or Terabytes Written in lifespan) has now doubled to 2,400 TBW, compared to the PM9A1's 1,200 TBW, which should make for a fairly reliable long-term storage drive. The last-gen NVMe Gen 4 Samsung PM9A1 was limited to 7 GB/s read and 5.2 GB/s write. Comparatively, we now see the Gen 5 Samsung PM9E1 achieving a whopping 14.5 GB/s read and 13 GB/s write, which is not only clearing its Gen 4 predecessors, but keeping write speed in much closer parity with reads than Samsung managed last time. According to YongCheol Bae, executive vice president of memory product planning at Samsung, "Our PM9E1 integrated with a 5nm controller delivers industry-leading power efficiency and utmost performance validated by our key partners. In the rapidly-growing on-device AI era, Samsung's PM9E1 will offer a robust foundation for global customers to effectively plan their AI portfolios." This drive is meant to target both consumers and the enterprise, but a lot of the official speak does seem to lean toward enterprise demand, particularly in AI. The PM9E1 is being launched in four capacities: 512 GB, 1 TB, 2 TB, and 4 TB. The company says that the 4 TB model is aimed at PC users who need plenty of space for AI-generated material, as well as gaming, high-resolution video, and other intense tasks and large files. According to Samsung, the power efficiency of the PM9E1 has also improved in power efficiency by over 50% compared to last-gen, which the company says should help with battery life, including when running AI tasks on-device. Several security features, including Device Authentication and Firmware Tampering Attestation, have also been added to the drive through the updated Security Protocol and Data Model (SPDM) Version 1.2. It's unclear why Samsung pulled the press release, but it seems that this new drive is coming soon, and we hope to have more concrete information in the near future. There's no pricing or a firm release date yet, but we hope to have that soon.
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Samsung Begins Mass Producing The Industry's Highest Performance MP9E1 Gen5 SSD
The Samsung MP9E1 Gen5 SSD is built with eighth-generation V-NAND technology, offering better efficiency and performance than its predecessor. The leading memory and storage manufacturer, Samsung, has commenced the mass production of MP9E1 SSD. The MP9E1 SSD is the fastest storage drive from the company, built on an in-house 5 nm controller, and uses 8th gen V-NAND to reach incredibly high sequential read/write speed and power efficiency. As published in the latest blog, Samsung claims that the MP9E1 Gen5 SSD can reach up to 14.5 GB/s Read and 13 GB/s of Write speeds. The 8th gen V-NAND (V8) used in the SSD is a TLC(Triple Level Cell) NAND with high density to deliver larger storage space in a small footprint. It's a high-performance vertical NAND that also excels in power efficiency compared to the previous generation V-NAND. The Executive VP of Memory Product Planning at Samsung, YongCheol Bae said, Our PM9E1 integrated with a 5 nm controller delivers industry-leading power efficiency and utmost performance validated by our key partners,...In the rapidly growing on-device AI era, Samsung's PM9E1 will offer a robust foundation for global customers to effectively plan their AI portfolios. Through the eight-channel Gen5 interface, the PM9E1 can double the sq read/write speeds compared to the predecessors, enabling faster data transfer for both general work and data-intensive AI applications. The MP9E1 can transfer up to 14 GB of LLM to the DRAM in less than a second and offers improved efficiency, which is over 50% better than the predecessors. This not only reduces the overall power consumption but also increases the battery life of laptops. The Samsung PM9E1 Gen5 SSD is available in various storage capacities such as 512 GB, 1 TB, 2 TB, and 4TB. While 512 GB, 1 TB, and 2 TB storage options will provide sufficient space for storing important files, apps, and games, the 4 TB one can allow storing data-heavy programs and large multimedia files and games. The Samsung PM9E1 Gen5 SSD also carries strong security features such as Security Protocol and Data Model(SPDM) v1.2 to ensure the SSD can have a Secure Channel, Device Authentication, and Firmware Tampering Attestation to avoid forgery and manipulation attacks on the data during production or distribution. Following the mass production of PM9E1, Samsung is also planning to expand its SSD catalog and has recently started mass-producing the latest and the fastest QLC 9th gen V-NAND for faster and more power-efficient storage solutions for PCs.
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Samsung Commences Mass Production of High-Performance PCIe 5.0 PM9E1 SSD
Samsung Electronics has officially started mass production of its new PCIe 5.0 solid-state drive (SSD), the PM9E1. Built with the company's in-house 5-nanometer (nm) controller and eighth-generation V-NAND (V8) technology, the PM9E1 aims to deliver enhanced performance and power efficiency, catering specifically to the demands of on-device artificial intelligence (AI) applications in personal computers. The PM9E1 SSD leverages an eight-channel PCIe 5.0 interface, effectively doubling the sequential read and write speeds compared to its predecessor, the PM9A1a. It achieves read speeds of up to 14.5 gigabytes per second (GB/s) and write speeds of up to 13 GB/s. This significant boost in data transfer rates facilitates quicker handling of data-intensive AI applications. For instance, a 14 GB large language model (LLM) can be transferred from the SSD to the system's RAM in under a second, substantially reducing latency and improving overall system responsiveness. Addressing the growing need for larger storage solutions, the PM9E1 is available in multiple capacities: 512 GB, 1 TB, 2 TB, and an industry-leading 4 TB option. The 4 TB model is particularly suited for users who work with large files such as AI-generated content, data-heavy software, and high-resolution video footage. It also benefits gamers and professionals who require substantial storage for intensive workloads. One of the standout features of the PM9E1 is its enhanced power efficiency, boasting an improvement of over 50% compared to the previous generation. This advancement is crucial for on-device AI applications and portable computing, where battery life is a significant concern. By reducing power consumption without compromising performance, the PM9E1 allows for longer usage periods between charges, enhancing the user experience for mobile computing platforms. In response to increasing security demands, Samsung has implemented the Security Protocol and Data Model (SPDM) version 1.2 in the PM9E1 SSD. This specification introduces features such as Secure Channel, Device Authentication, and Firmware Tampering Attestation. These technologies work together to prevent supply chain attacks, ensuring that the SSD's data remains unaltered and secure throughout the production and distribution processes. With the launch of the PM9E1, Samsung plans to expand its advanced SSD offerings to global PC manufacturers. The company also intends to release PCIe 5.0-based consumer products in the near future, aiming to strengthen its position in the on-device AI market. By providing high-performance, energy-efficient storage solutions with robust security features, Samsung is positioning itself to meet the evolving needs of both consumers and enterprise clients in the era of AI-driven computing. Source: Samsung
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Samsung has started mass production of its fastest SSD to date, the PM9E1. This PCIe 5.0 M.2 drive boasts speeds up to 14.5 GB/s, marking a significant advancement in storage technology.
Samsung, a leader in semiconductor technology, has announced the commencement of mass production for its latest solid-state drive (SSD), the PM9E1. This new drive represents a significant leap forward in storage technology, utilizing the PCIe 5.0 interface to achieve unprecedented speeds 1.
The PM9E1 is an M.2 form factor drive that leverages the PCIe 5.0 x4 interface, allowing it to reach sequential read speeds of up to 14.5 GB/s and sequential write speeds of up to 13.5 GB/s. These figures represent a substantial improvement over previous generation SSDs, with read speeds increasing by 2.17 times and write speeds by 2.08 times compared to PCIe 4.0 SSDs 2.
Samsung has incorporated several advanced features into the PM9E1 to enhance its performance and reliability. The drive utilizes Samsung's seventh-generation V-NAND technology and a proprietary controller. It also includes a heat spreader label to manage thermal output effectively 3.
The PM9E1 is primarily designed for enterprise and data center applications, where high-speed data processing and storage are critical. It is particularly well-suited for AI, machine learning, and high-performance computing workloads. The drive's exceptional performance makes it ideal for handling large datasets and complex computations 1.
Samsung plans to offer the PM9E1 in various capacity options, ranging from 1.92TB to 15.36TB. This range provides flexibility for different enterprise storage needs. While mass production has begun, specific details about pricing and retail availability have not been disclosed 2.
The introduction of the PM9E1 SSD is expected to have a significant impact on the storage industry. As PCIe 5.0 technology becomes more widespread, it is likely to drive innovation in related fields such as data processing and high-performance computing. Samsung's move to mass production of these drives signals a new era in storage technology, potentially influencing the development of future computing systems and applications 3.
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Micron Technology has announced the commencement of volume production for its 9th generation NAND flash memory, boasting significant improvements in performance, capacity, and energy efficiency.
5 Sources
SK Hynix has developed a new high-performance SSD called PEB110 E1.S, designed specifically for data centers. This new SSD promises improved performance and efficiency for enterprise applications.
2 Sources
TeamGroup introduces the T-Force GC Pro Gen5 SSDs, featuring impressive speeds up to 12.5 GB/s and a unique graphene cooling solution. These new drives aim to set a new standard in high-performance storage for enthusiasts and professionals.
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Samsung has successfully validated its fastest LPDDR5X RAM, running at 10.7 Gbps, with MediaTek's upcoming Dimensity 9400 SoC. This breakthrough promises significant performance improvements for future mobile devices.
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SK Hynix has achieved a significant milestone in memory technology by developing the industry's first 16GB DDR5 memory using the 1c node on a 10nm process. This breakthrough paves the way for next-generation memory solutions across various applications.
2 Sources