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On Fri, 28 Feb, 4:02 PM UTC
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Micron Ships Out Industry's First 1γ DRAM Node, Targeted Towards Taking DDR5 Capabilities To New Levels
Micron has announced the shipment of its cutting-edge sixth-generation (10nm-class) DRAM node, giving them clear leadership in industrial and consumer markets. [Press Release]: Micron Technology, Inc, today announced it is the first in the industry to ship samples of its 1γ (1-gamma), sixth-generation (10nm-class) DRAM node-based DDR5 memory designed for next-generation CPUs to ecosystem partners and select customers. This 1γ DRAM milestone builds on Micron's previous 1α (1-alpha) and 1β (1-beta) DRAM node leadership to deliver innovations that will power future computing platforms from the cloud to industrial and consumer applications to Edge AI devices like AI PCs, smartphones and automobiles. The Micron 1γ DRAM node will first be leveraged in its 16Gb DDR5 DRAM and over time will be integrated across Micron's memory portfolio to meet the industry's accelerating demand for high-performance, energy-efficient memory solutions for AI. Designed to offer speed capabilities of up to 9200MT/s, the 16Gb DDR5 product provides up to a 15% speed increase and over 20% power reduction compared to its predecessor. Why this matters: With the introduction of AI across the data center and the edge, the demand for memory has never been greater. Micron's transition to the 1γ DRAM node helps address the key challenges customers are looking to resolve: Micron's proven DRAM technology and manufacturing strategy over multiple generations has enabled the creation of this optimized 1γ node. The 1γ DRAM node innovation is supported by CMOS advancements, including next-generation high-K metal gate technology that improves the transistor performance for better speed capability, design optimization and feature size shrink, all of which unlock the benefits of power savings and performance scaling. Additionally, by optimally incorporating leading edge EUV lithography, along with advanced high aspect ratio etch technology and industry-leading design innovations, the 1γ node delivers industry-leading bit density advantages. By developing the 1γ node for manufacturing across global sites, Micron is helping to ensure better technology and supply resiliency for the industry. Transforming products from cloud to edge Serving as the foundation for future products, the 1γ node will be integrated across the Micron memory portfolio:
[2]
Micron Ships Industry's First 1γ DRAM for Breakthrough Performance in AI PCs and Data Centers
Micron Technology announced it is the first in the industry to ship samples of its 1γ (1-gamma), sixth-generation (10nm-class) DRAM node-based DDR5 memory designed for next-generation CPUs to ecosystem partners and select customers. This 1γ DRAM milestone builds on Micron's previous 1α (1-alpha) and 1β (1-beta) DRAM node leadership to deliver innovations that will power future computing platforms from the cloud to industrial and consumer applications to Edge AI devices like AI PCs, smartphones and automobiles.
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Micron Technology has announced the shipment of its groundbreaking 1γ (1-gamma) DRAM node, marking a significant advancement in memory technology for AI applications, data centers, and consumer devices.
Micron Technology has achieved a significant milestone in the semiconductor industry by becoming the first to ship samples of its 1γ (1-gamma) DRAM node-based DDR5 memory 12. This sixth-generation 10nm-class DRAM technology represents a leap forward in memory capabilities, building upon Micron's previous 1α (1-alpha) and 1β (1-beta) DRAM node advancements 1.
The new 1γ DRAM node is set to revolutionize memory performance across various applications:
Micron's 1γ DRAM node incorporates several cutting-edge technologies:
The 1γ DRAM node is poised to transform products across various sectors:
Micron's achievement solidifies its leadership position in the DRAM market:
As AI continues to reshape the technology landscape, Micron's 1γ DRAM node represents a crucial advancement in meeting the growing demand for high-performance, energy-efficient memory solutions. This innovation is set to play a pivotal role in powering the next generation of AI-enabled devices and data center infrastructure.
SK Hynix has achieved a significant milestone in memory technology by developing the industry's first 16GB DDR5 memory using the 1c node on a 10nm process. This breakthrough paves the way for next-generation memory solutions across various applications.
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SK Hynix, a leading South Korean semiconductor manufacturer, has announced the development of its 6th generation DRAM chip. This new chip boasts significant improvements in power efficiency and performance, marking a major advancement in memory technology.
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Micron Technology introduces new Crucial DDR5 CUDIMM and CSODIMM memory modules, offering speeds up to 6,400 MT/s, designed for AI PCs and high-performance systems. These modules promise faster performance and improved stability for data-intensive AI workloads.
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Micron Technology introduces new MRDIMM memory modules, offering enhanced performance and reduced latency for data centers, AI, and high-performance computing applications.
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Micron Technology has introduced its latest High Bandwidth Memory (HBM) solution, the HBM3E, featuring unprecedented capacity and bandwidth. This advancement promises significant improvements for AI and high-performance computing applications.
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