SK hynix 256 GB DDR5 module slashes Intel Xeon power consumption by 18%, saving data centers millions

Intel-certified 256 GB DDR5 stick could cut Xeon memory power by 18%, saving millions of dollars -- a 32W-per-socket reduction could save millions per hyperscale data center

SK hynix on Thursday said that its range-topping 256 GB DDR5 RDIMM based on 32 Gb memory devices has passed the Intel Data Center Certified process, the industry's first memory module at this capacity to do so. Normally, certification of a memory module by Intel would be mundane, but this module is special; it combines capacity, low power consumption, and performance, thus potentially saving data center operators millions of dollars. AI servers not only consume plenty of premium high-bandwidth memory (HBM) used on AI accelerators like Nvidia B300, but also tons of commodity server DDR5 SDRAM that connect to x86 processors. A single high-capacity DDR5 memory module can consume up to 15W or even 25W (depending on performance, capabilities, and workloads), so a fully equipped 12-channel Xeon 6 memory subsystem can draw between 180W and 300W, comparable to the CPU's power consumption. A 32 Gb memory chip made on SK hynix's 1b process technology (5 Generation 10nm-class DRAM process) consumes significantly less power than two 16 Gb memory ICs made on the company's 1a production node (4 Generation 10nm-class DRAM node), so using a 256 GB DDR5 RDIMM based on the latest DRAMs leads to significant energy savings. SK hynix claims that these new 256 GB DDR5 RDIMMs "achieve up to approximately 18% lower power consumption than previous 256 GB products." Offering 32.4W lower power consumption per single-CPU Xeon 6 machine translates into significant savings for modern AI or hyperscale cloud deployments that typically use tens of thousands of machines. As a result, a relatively simple Intel certification to earn the Intel Data Center Certified badge could drive success for SK hynix in the data center market, particularly in the Xeon 6-based AI server space. "We are now able to respond more swiftly to customer needs, solidifying our leadership in the server DDR5 DRAM market," said Sangkwon Lee, head of DRAM Product Planning & Enablement at SK hynix. "As a full-stack AI memory creator, we will actively address the growing demand for high-performance, low-power, and high-capacity memory solutions to further enhance customer satisfaction."

SK hynix's new 256GB RDIMM server memory module passes Intel's tests, ready for Xeon 6 platform

TL;DR: SK hynix's new 256GB DDR5 RDIMM server memory modules, based on 32Gb DRAM, are officially verified for Intel's Xeon 6 platform, delivering up to 16% better inference performance and 18% improved power efficiency. This advancement supports growing AI workload demands and strengthens SK hynix's leadership in high-capacity, energy-efficient server memory. SK hynix has announced that its new 256GB DDR5 RDIMM server memory modules have been approved by Intel for its new Xeon 6 platform. In a new press release, SK hynix said its new high-capacity 256GB DDR5 server memory modules based on 1b 32Gb have been verified for compatibility with Intel's next-gen Xeon 6 platform. The new registered memory (RDIMM) is a buffered module type of RAM used in servers and workstations, with testing and validation completed at Intel's Advanced Data Center Development Laboratory in the US. SK hynix says that servers using its new 32Gb based 256GB RDIMM memory module will enjoy 16% more inference performance versus its 128GB modules on 32Gb DRAM, as well as up to 18% more power efficiency versus existing 256GB RDIMMs based on its 1a 16Gb DRAM modules, using a design built around a single 32Gb DRAM chip. SK hynix said in its press release: "We have proven that our high-capacity DDR5 module technology is the world's best by being the first in the industry to be verified for compatibility with Intel's latest server platform, which leads the server CPU market". The company continued: "We will use this as a stepping stone to expand cooperation with major global data center operators and continue our leadership in the next-generation memory market by responding in a timely manner to the rapidly growing demand from server customers". SK hynix Vice President Lee Sang-kwon (in charge of DRAM product planning) said: "We have solidified our leadership in the server DDR5 DRAM market and can now respond quickly to customer needs. As a full-stack AI memory creator, we will actively respond to the growing demand for high-performance, low-power, and high-capacity memory to drive customer satisfaction". Dimitrios Ziakas, vice president of Platform Architecture at Intel, added: "The close collaboration between our two companies has resulted in excellent results and contributed to the advancement of memory technology. The high-capacity module will meet the rapidly growing demands of AI workloads and significantly improve the performance and efficiency that data center customers want".