Navitas Unveils Industry's First 8.5 kW AI Data Center Power Supply at electronica 2024
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On Tue, 29 Oct, 12:02 AM UTC
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[1]
Navitas Previews Advances in GaN and SiC Technologies, Including Industry's First 8.5 kW AI Data Center Power Supply at electronica 2024 By Investing.com
Explore the latest GaN and SiC technologies to ~Electrify Our World' & deliver the most efficient and reliable power solutions for AI data centers, EVs, and consumer markets, from 20 W to 20 MW TORRANCE, Calif., Oct. 28, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced it will preview several breakthroughs at electronica 2024 (Hall C 3, booth 129, November 12- 15). Aligned with the mission to ~Electrify our World™', the Planet Navitas booth invites visitors to discover how next-gen GaN and SiC technology enable the latest solutions for AI data centers, EV transportation, renewable energy, industrial drives, and consumer appliances. Each example highlights end-user benefits such as higher power density, increased efficiency, longer range, faster charging, portability, and grid independence, along with a focus on how low-carbon-footprint GaN and SiC technology can save over 6 Gtons/yr CO by 2050. Major technology updates include the world's first 8.5 kW power supply for AI and hyperscale data centers, using high-power GaNSafe power ICs and Gen-3 Fast SiC MOSFETs. Enabled by over 20 years of SiC innovation leadership, GeneSiC technology offers world leading performance over temperature to provide cool-running, fast-switching SiC MOSFETs to support up to 3x more powerful AI data centers and faster charging EVs. The Gen-3 Fast GeneSiC MOSFETs are developed using a proprietary ~trench-assisted planar' technology offering leading performance, while also providing superior robustness, manufacturability and cost than competition. Gen-3 Fast MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25 °C lower case temperature, and up to 3x longer life than SiC products from other vendors. Also on display will be the company's latest development of GaNSense™ Motor Drives ICs for home appliance and industrial, 650V bi-directional GaN demonstrator for next generation, highest efficiency and power density solutions, as well as newly released SiCPAK™ modules for high-power markets such as power grid, renewables, EV charging, and UPS. In addition to the exhibition, the company's Llew Vaughan-Edmunds will take part in the EETimes panel debate ~SiC & GaN Technologies - Exploring Advancements, Addressing Challenges' (November 12, 2:20 pm local time). This debate will examine both recent and upcoming advances that will increase wide bandgap technologies' share of the legacy silicon power IC market, which has been valued at $22bn/yr. The analyst house Yole Group predicts GaN and SiC products will make up 30% share of the power semi market by 2027. electronica 2024 takes place at Trade Fair Center Messe München, Am Messesee 2, 81829 Munich, from November 12 " 15. Planet Navitas is featured in Hall C3, booth #129. To schedule a meeting with Navitas at electronica, email euro.sales@navitassemi.com About Navitas Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending, with the industry's first and only 20-year GaNFast warranty. Navitas is the world's first semiconductor company to be CarbonNeutral ®-certified. Navitas Semiconductor, GaNFast, GaNSense, GeneSiC and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners. Contact Information Stephen Oliver, VP Corporate Marketing & Investor Relations ir@navitassemi.com Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing info@navitassemi.com A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/da96dc6a-8518-464d-a370-fcd62be6affb
[2]
Navitas Previews Advances in GaN and SiC Technologies, Including Industry's First 8.5 kW AI Data Center Power Supply at electronica 2024 - Navitas Semiconductor (NASDAQ:NVTS)
TORRANCE, Calif., Oct. 28, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor NVTS, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced it will preview several breakthroughs at electronica 2024 (Hall C 3, booth 129, November 12th- 15th). Aligned with the mission to 'Electrify our World™', the "Planet Navitas" booth invites visitors to discover how next-gen GaN and SiC technology enable the latest solutions for AI data centers, EV transportation, renewable energy, industrial drives, and consumer appliances. Each example highlights end-user benefits such as higher power density, increased efficiency, longer range, faster charging, portability, and grid independence, along with a focus on how low-carbon-footprint GaN and SiC technology can save over 6 Gtons/yr CO2 by 2050. Major technology updates include the world's first 8.5 kW power supply for AI and hyperscale data centers, using high-power GaNSafe power ICs and Gen-3 Fast SiC MOSFETs. Enabled by over 20 years of SiC innovation leadership, GeneSiC technology offers world leading performance over temperature to provide cool-running, fast-switching SiC MOSFETs to support up to 3x more powerful AI data centers and faster charging EVs. The Gen-3 Fast GeneSiC MOSFETs are developed using a proprietary 'trench-assisted planar' technology offering leading performance, while also providing superior robustness, manufacturability and cost than competition. Gen-3 Fast MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors. Also on display will be the company's latest development of GaNSense™ Motor Drives ICs for home appliance and industrial, 650V bi-directional GaN demonstrator for next generation, highest efficiency and power density solutions, as well as newly released SiCPAK™ modules for high-power markets such as power grid, renewables, EV charging, and UPS. In addition to the exhibition, the company's Llew Vaughan-Edmunds will take part in the EETimes panel debate 'SiC & GaN Technologies - Exploring Advancements, Addressing Challenges' (November 12th, 2:20 pm local time). This debate will examine both recent and upcoming advances that will increase wide bandgap technologies' share of the legacy silicon power IC market, which has been valued at $22bn/yr. The analyst house Yole Group predicts GaN and SiC products will make up 30% share of the power semi market by 2027. electronica 2024 takes place at Trade Fair Center Messe München, Am Messesee 2, 81829 Munich, from November 12th - 15th. "Planet Navitas" is featured in Hall C3, booth #129. To schedule a meeting with Navitas at electronica, email euro.sales@navitassemi.com About Navitas Navitas Semiconductor NVTS is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending, with the industry's first and only 20-year GaNFast warranty. Navitas is the world's first semiconductor company to be CarbonNeutral®-certified. Navitas Semiconductor, GaNFast, GaNSense, GeneSiC and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners. Contact Information Stephen Oliver, VP Corporate Marketing & Investor Relations ir@navitassemi.com Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing info@navitassemi.com A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/da96dc6a-8518-464d-a370-fcd62be6affb Market News and Data brought to you by Benzinga APIs
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Navitas Semiconductor showcases advancements in GaN and SiC technologies, including a groundbreaking 8.5 kW power supply for AI data centers, at the upcoming electronica 2024 event.
Navitas Leads Power Semiconductor Innovation at electronica 2024
Navitas Semiconductor (Nasdaq: NVTS), a leader in next-generation power semiconductor technology, is set to showcase groundbreaking advancements in gallium nitride (GaN) and silicon carbide (SiC) technologies at the upcoming electronica 2024 event in Munich, Germany 12. The company's exhibition, themed "Planet Navitas," will highlight how these innovative technologies are revolutionizing various sectors, from AI data centers to electric vehicles and renewable energy.
World's First 8.5 kW AI Data Center Power Supply
At the forefront of Navitas' presentation is the world's first 8.5 kW power supply designed for AI and hyperscale data centers. This cutting-edge solution utilizes high-power GaNSafe power ICs and Gen-3 Fast SiC MOSFETs, demonstrating the company's commitment to addressing the growing power demands of artificial intelligence infrastructure 12.
Advancements in SiC Technology
Navitas will also showcase its GeneSiC technology, which offers industry-leading performance over a wide temperature range. The Gen-3 Fast GeneSiC MOSFETs, developed using a proprietary 'trench-assisted planar' technology, provide superior robustness, manufacturability, and cost-effectiveness compared to competitors. These MOSFETs enable up to 25°C lower case temperature and up to 3x longer life than other SiC products, making them ideal for high-power applications in AI data centers and electric vehicle charging 12.
Expanding Product Portfolio
The company's exhibition will feature several other innovations, including:
- GaNSenseâ„¢ Motor Drives ICs for home appliances and industrial applications
- 650V bi-directional GaN demonstrator for next-generation, high-efficiency power solutions
- SiCPAKâ„¢ modules for high-power markets such as power grids, renewables, and EV charging 12
Industry Impact and Market Projections
Navitas' advancements come at a crucial time for the power semiconductor industry. The legacy silicon power IC market is valued at $22 billion per year, with wide bandgap technologies like GaN and SiC poised to capture a significant share. According to Yole Group, GaN and SiC products are expected to make up 30% of the power semiconductor market by 2027 12.
Environmental Benefits
In line with its mission to "Electrify our Worldâ„¢," Navitas emphasizes the environmental impact of its technologies. The company claims that its low-carbon-footprint GaN and SiC solutions have the potential to save over 6 Gigatons of CO2 per year by 2050, highlighting the role of power semiconductors in addressing climate change 12.
Navitas' Market Position
As the only pure-play, next-generation power-semiconductor company, Navitas has positioned itself at the forefront of the industry. With over 250 patents issued or pending and the industry's first 20-year GaNFast warranty, the company is well-equipped to lead the transition to more efficient and powerful semiconductor solutions 12.
electronica 2024 will take place from November 12-15 at the Trade Fair Center Messe München, where attendees can visit the "Planet Navitas" booth in Hall C3, #129, to explore these innovations firsthand 12.
Reference
[1]
Navitas Unveils World's First 8.5kW AI Data Center Power Supply Using GaN and SiC Technology
Navitas Semiconductor has introduced a groundbreaking 8.5kW power supply unit for AI and hyperscale data centers, achieving 98% efficiency through the use of gallium nitride (GaN) and silicon carbide (SiC) technologies.
2 Sources
2 Sources
Navitas Showcases Next-Gen SiC and GaN Technologies at TECHNO-FRONTIER in Japan
Navitas Semiconductor presents its cutting-edge Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies at TECHNO-FRONTIER 2024 in Japan, highlighting applications in AI data centers, electric vehicles, industrial power, and fast charging.
3 Sources
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Infineon Pioneers World's First 300 mm Power Gallium Nitride (GaN) Technology: A Game-Changer for the Industry
Infineon Technologies AG has announced the development of the world's first 300 mm power Gallium Nitride (GaN) technology, marking a significant advancement in semiconductor manufacturing. This breakthrough is set to revolutionize various industries by enabling more efficient and compact power systems.
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Advanced Energy Unveils High-Efficiency Power Solutions for AI Servers at 2024 OCP Global Summit
Advanced Energy Industries, Inc. will showcase its latest ultra-efficient power solutions for AI servers and data centers at the 2024 OCP Global Summit, featuring technologies designed to meet the increasing power demands of AI applications.
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NVIDIA Unveils AI Innovations for Retail, Robotics, and Autonomous Vehicles at CES 2025
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