Intel partners with SoftBank to develop Z-Angle Memory that promises triple HBM capacity

Reviewed byNidhi Govil

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Intel and SoftBank subsidiary Saimemory signed a collaborative agreement to develop Z-Angle Memory (ZAM), a vertically-stacked memory technology designed to compete with High Bandwidth Memory in AI data centers. The next-generation memory promises 2 to 3 times more capacity, greater bandwidth, and half the power consumption of HBM, with prototypes expected in 2027 and mass production targeted for 2029.

Intel Returns to Memory Business with Z-Angle Memory Development

Intel has signed a collaborative agreement with Saimemory, a SoftBank subsidiary, to advance the development of Z-Angle Memory (ZAM), marking the chipmaker's return to the memory market for the first time since the 1980s

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. This next-generation memory technology is designed to compete directly with High Bandwidth Memory (HBM) used in AI data centers, but with significantly enhanced specifications. The vertically-stacked memory architecture promises to deliver 2 to 3 times the capacity of HBM while operating at half the power consumption and offering greater bandwidth

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. The partnership addresses a critical bottleneck in AI computing, as larger and more complex generative AI models demand advanced memory systems capable of handling massive data throughput while controlling energy costs

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Source: Benzinga

Source: Benzinga

Advanced DRAM Bonding Technology Powers ZAM Innovation

The Z-Angle Memory program builds on Intel's Next Generation DRAM Bonding (NGDB) initiative, which was completed under the Advanced Memory Technology R&D program managed by the U.S. Department of Energy and National Nuclear Security Administration through Sandia National Laboratory, Lawrence Livermore National Laboratory, and Los Alamos National Laboratory

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. Saimemory will attempt to achieve these ambitious goals by vertically stacking more DRAM and using Intel's Embedded Multi-Die Interconnect Bridge (EMIB) to reduce latency between individual chips

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. The innovation builds on Intel's existing Foveros chip stacking technology, which first emerged in 2018 by extending Intel's EMIB technology vertically to allow stacking logic chips on top of one another

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. Dr. Joshua Fryman, Intel Fellow and CTO of Intel Government Technologies, explained that "Standard memory architectures aren't meeting AI needs, so NGDB defined a whole new approach to accelerate us through the next decade"

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Source: TweakTown

Source: TweakTown

Production Timeline and Cost Advantages Target 2029 Commercialization

Saimemory is slated to produce its first ZAM prototypes sometime in 2027, with plans to develop a mass production line for the new memory by 2029

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. According to reports from Nikkei, the DRAM bonding technology is designed to be up to 60% cheaper to produce than current HBM solutions

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. The partnership announced prototypes expected by the fiscal year ending March 31, 2028, with commercialization targeted for fiscal 2029

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. Intel and Sandia had to design a new stacking approach and a different way of organizing the DRAM chips, with early prototypes confirming it was possible to increase capacity through new stacking techniques while recent developments have demonstrated the necessary high performance

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Source: PCWorld

Source: PCWorld

Strategic Implications for AI Infrastructure and Japan's Semiconductor Revival

The collaboration extends the relationship between SoftBank Group and Intel, following SoftBank Group's mid-2025 agreement to invest $2 billion in the U.S. chipmaker

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. This marks the first time a Japanese company has attempted to produce cutting-edge memory in decades, as Japan was a major memory manufacturing region in the 1980s before Korean and Taiwanese manufacturing dominated the market

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. Other firms backing the project include Japanese IT hardware and services firm Fujitsu, the recent Micron acquisition PowerChip Semiconductor Manufacturing, Shinko Electric Industries, and the University of Tokyo

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. Gwen Voskuilen, principal member of technical staff at Sandia, noted that "This is an exciting technology that we anticipate will lead to a wider adoption of higher bandwidth memories in systems that are currently unable to take advantage of high bandwidth memory due to its limited capacity and power constraints"

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. The venture positions memory density and power efficiency as critical factors for AI data centers processing large-scale AI models, while SoftBank views the development as a key initiative to support next-generation social infrastructure and strengthen Japan's global competitiveness in semiconductor technologies

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. Shares of SoftBank rose 3.13%, while Intel stock rose 5% in overnight trading following the announcement

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