SK Hynix Leads NAND Flash Race with 321-Layer Technology, Paving Way for 100TB+ SSDs

SK Hynix beats Samsung by launching its 321-layer TLC NAND flash memory first

In a nutshell: SK Hynix just leapfrogged rival Samsung. The world's second-largest memory chipmaker has become the first company to mass-produce triple-level cell NAND with 321 layers. The advancement should lead to higher capacity memory at an affordable price point. SK Hynix recently released its new 1-terabit 4D NAND chips, setting a new record. The company is on a streak as it was also the first to launch its 238-layer NAND less than a year ago. Like the previous launch, the 321-layer breakthrough is significant because it could notably boost storage density for consumer and enterprise SSDs. The densely packed chips could lead to more affordable SSDs with capacities reaching over 100TB. This breed of NAND will prove especially useful for AI data centers, though other performance-hungry applications craving energy-efficient storage should also benefit. SK Hynix used ingenious process optimizations to cram over 300 layers into a single piece of NAND. The company's new "Three Plugs" technology simultaneously connects three memory layer vertical channels through an optimized electrical linking process. The process is known for excellent manufacturing efficiency and utilizes low-stress materials with automatic alignment correction. However, linking all those layers created stress and alignment issues SK Hynix had to overcome. The company overcame this by developing new low-stress materials and automatic alignment correction to keep everything in order during manufacturing. The new process also boosted production efficiency by 59 percent compared to the previous generation by reusing the same platform as the 238-layer NAND. These efficiency improvements mean better performance and lower costs in the market. The company claims the new 321-layer chips have 12 percent faster data transfers, 13 percent faster reading, and over 10 percent better power efficiency than 238-layer NAND. SK Hynix plans to ship these new storage devices to customers in the first half of 2025. The AI market is the initial target, but ultra-high capacity SSDs for gaming rigs, media editing, and data hoarding should follow shortly after. Samsung isn't taking this news lying down. The tech giant is already working on 400-layer NAND to arrive by 2026. It hopes to have its bonded vertical NAND tech ready by 2030, facilitating even denser chips with over 1,000 layers and SSDs potentially exceeding 200TB. Japan's Kioxia has similar plans.

Samsung's archrival becomes first chipmaker to launch 300+ layer TLC NAND flash memory; SK Hynix's 321-layer 1-terabit TLC paves the way for more affordable 100TB+ SSDs

AI storage demands drive innovation in high-capacity NAND solutions Samsung and SK Hynix have continued their head-to-head battle in the NAND flash memory market with the latter taking the lead with a new launch. SK Hynix, the world's second-largest memory chipmaker, recently became the first to mass-produce triple-level cell (TLC) NAND flash with over 300 layers. The company's new 321-layer, 1-terabit TLC 4D NAND flash, announced recently, is set to revolutionize the data storage industry, paving the way for more affordable ultra-high-capacity solid-state drives (SSDs) that exceed 100TB in capacity. The NAND industry is racing to push the limits of data storage technology, and SK Hynix's achievement is a major milestone. After the launch of its 238-layer NAND flash last year, SK Hynix's latest 321-layer NAND flash sets a new industry standard. The company plans to supply these chips to customers starting in the first half of 2025, targeting the booming artificial intelligence (AI) market, which demands high-performance, energy-efficient storage solutions. The 321-layer NAND was made possible by SK Hynix's "Three Plugs" process technology, which involves electrically connecting three plugs through an optimized follow-up step, significantly improving the speed, power efficiency, and overall performance of the chips. SK Hynix also developed a low-stress material and introduced technology that automatically corrects alignment among the plugs to further optimize the manufacturing process. The 321-layer product offers a 12% increase in data transfer speed and a 13% improvement in reading performance relative to the previous 238-layer NAND. Furthermore, it reduces power consumption by over 10%. With a 59% boost in productivity, SK Hynix's new NAND offers an enhanced storage solution for AI data centers and on-device AI applications. While SK Hynix has achieved this historic feat, its main competitor, Samsung, is not far behind. Samsung is reportedly working on a 400-layer NAND flash chip, which it plans to release by 2026. The company's roadmap includes developing bonding vertical NAND (BV NAND) technology, which will allow for even greater storage density and minimized heat buildup. Samsung's long-term goal is to introduce NAND chips with over 1,000 layers by 2030, potentially breaking the 200TB storage barrier for AI-driven SSDs. "SK Hynix is on track to advancing to the Full Stack Al Memory Provider by adding a perfect portfolio in the ultra-high performance NAND space on top of the DRAM business led by HBM," noted Jungdal Choi, Head of NAND Development at SK Hynix.