Samsung debuts zHBM, zNAND-O and 400-layer BV-NAND for AI infrastructure at FMS 2026
11 Sources
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Samsung debuts three next-generation memory technologies for AI data centers -- zHBM, zNAND-O, and BV-NAND all rely on advanced wafer bonding technologies
Next generation wafer bonding enables innovative types of memory This week, Samsung presented its vision for next-generation memory and storage solutions both for AI and general-purpose applications at the Future of Memory and Storage (FMS) 2026 conference. The company introduced zHBM, zNAND-O,
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Samsung Electronics launches next-generation AI memory technology
Aug 4 (Reuters) - Samsung Electronics (005930.KS), opens new tab introduced a new generation of artificial intelligence memory technology on Tuesday, seeking to reinforce its chipmaking lead in the booming AI market. The world's largest memory chip manufacturer chose this year's Future of Memory
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Samsung announces next-gen 3D memory when all we want is reasonably priced DDR5 - Engadget
The new tech looks impressive, but most of it will be gobbled up by AI data centers. It used to be nice when Samsung announced its latest 3D memory or V-NAND storage, as we could all look forward to our PCs booting faster and files loading quicker. Now, the company has just announced its new
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Samsung reveals next-gen memory with stacked HBM and 400-layer NAND
Serving tech enthusiasts for over 25 years. TechSpot means tech analysis and advice you can trust. In brief: Samsung is adding a new set of memory technologies to its AI strategy, using wafer bonding and 3D stacking to push bandwidth, density, and energy efficiency beyond what current
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Samsung Unveils Next-Gen 3D-Memory Vision at FMS 2026, Charting the Future of AI Infrastructure
Samsung introduces industry-first concept models of zHBM and zNAND-O, highlighting leadership in next-generation memory architecture for HPC and AI infrastructure 400-plus-layer V10 BV-NAND with wafer bonding technology revealed for the first time in industry AI memory roadmap spans
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Samsung unveils zHBM memory chip concept for future AI servers
Samsung Electronics unveiled a new memory chip concept called zHBM for future AI servers, saying it could deliver about eight times the speed and more than 10 times the memory density of HBM5 chips. The company presented zHBM, short for Z-axis High Bandwidth Memory, at the Future of Memory and
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Samsung reveals zHBM: future RAM is stacked above AI accelerator, boasts 8x performance of HBM5 and 3x energy efficiency
Samsung has been showing off a future innovation for memory in the form of zHBM, among other revelations at the Future of Memory and Storage (FMS) conference. FMS 2026 is happening in Santa Clara, California, where, as VideoCardz spotted, Samsung introduced us to both zHBM and zNAND-O which are
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Samsung Tackles the Memory & Storage Wall With 400+ Layer "Hybrid Bonded" V10 BV-NAND & zHBM That Stacks HBM Directly On Top of AI Chips
Samsung has introduced brand new memory and storage technologies at FMS 2026, such as V10 BV-NAND, zHBM, and zNAND-O. Next-Gen AI Accelerators Will Stack Massive Vertical HBM Stacks Directly On Top of Them With Samsung's zHBM Tech As AI and compute requirements continue to grow, the current swath
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Samsung's new memory chip could make Nvidia's AI chips faster
Anyone who has bought a fast new laptop only to watch it freeze while a file loads knows the frustration. The processor is not the problem. It is waiting on memory that cannot feed it fast enough, and that same bottleneck now sits between AI companies and faster models. Samsung Electronics says
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Samsung demos next-gen AI memory solutions at FMS 2026
At the Future of Memory and Storage (FMS) 2026 conference in Santa Clara, California, Samsung Electronics presented its latest portfolio of artificial intelligence (AI) memory innovations and an updated technology roadmap. Featuring an AI cloud server-inspired exhibition showcasing approximately
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Samsung introduces zHBM to stack memory vertically on logic chip - The Korea Times
A mockup of Samsung Electronics' zHBM is displayed at its booth for the Future of Memory and Storage 2026 in California, Tuesday (local time). Courtesy of Samsung Electronics Samsung Electronics showcased its next-generation 3D memory architectures at the Future of Memory and Storage 2026 in
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Samsung unveiled three next-generation memory technologies at the Future of Memory and Storage 2026 conference. The company introduced zHBM, a vertically stacked high-bandwidth memory architecture, zNAND-O for edge AI applications, and V10 BV-NAND featuring over 400 layers. All three technologies leverage advanced wafer bonding to address the growing demands of AI data centers and infrastructure.
Samsung Introduces Next-Generation 3D Memory Architecture for AI Infrastructure
Samsung Electronics presented three next-generation memory technologies at the Future of Memory and Storage (FMS) 2026 conference in Santa Clara, California, marking a shift in how AI memory will be designed and deployed.
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The world's largest memory chip manufacturer unveiled zHBM, zNAND-O, and V10 BV-NAND, all built on advanced wafer bonding technologies that promise to reshape AI infrastructure.5
This announcement comes as AI workloads expand beyond training large language models to the process of generating answers to user queries, driving demand for higher-capacity, more efficient memory solutions.2
Source: Samsung
zHBM: Vertically Stacked High-Bandwidth Memory Above AI Accelerators
Samsung's zHBM concept represents a fundamental change in memory architecture, placing HBM directly on top of AI accelerators instead of positioning it on the perimeter.
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This vertical stacking approach shortens the physical distance data must travel between compute and memory, designed to increase bandwidth and improve power efficiency for large-scale AI training and inference workloads.5
Source: Korea Times
Samsung projects that a next-generation interface system incorporating zHBM will deliver approximately eight times the performance of HBM5.
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The company's wafer bonding technology is expected to enable more than 10 times higher memory density compared to HBM5, while improving energy efficiency threefold and reducing thermal resistance by more than 50%.1
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The technology also supports customer-specific designs, allowing customized IP to be integrated into the interlayer between the memory stack and AI accelerator to expand memory capacity and enhance accelerator performance.5
V10 BV-NAND: Industry's First 400-Plus-Layer Bonding V-NAND
Samsung revealed V10 BV-NAND, the industry's first Bonding V-NAND architecture featuring more than 400 layers.
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This announcement arrives 13 years after the company introduced the industry's first V-NAND technology at the 2013 Flash Memory Summit.5
The new wafer-bonding architecture stacks memory cells to achieve unprecedented storage density and boost performance.2
BV-NAND increases memory density by approximately 58% compared to Samsung's previous V9 NAND generation.
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Beyond the increased layer count, V10 BV-NAND improves read, write, and input/output performance to meet growing demand from AI systems requiring higher-capacity and more power-efficient storage.2
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This technology is essentially next-generation 3D NAND that bonds NAND arrays atop all the circuitry needed to operate them, a method already adopted by companies like Kioxia/SanDisk, SK Hynix, and YMTC.1
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zNAND-O: High-Performance Storage for Edge AI Environments
Samsung introduced zNAND-O, a next-generation high-performance NAND solution currently in development in four- and eight-layer versions.
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Built on the company's V-NAND platform, zNAND-O is designed to enable putting multiple stacks of NAND devices on top of logic dies.1
Source: TweakTown
By combining high space efficiency, improved I/O performance, and low latency, zNAND-O is optimized for edge AI environments supporting real-time, data-intensive inference workloads.
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The technology targets edge AI systems that require low latency and tight power controls, placing storage closer to compute for applications that process data near its source.4
Market Context and AI Memory Demand
Samsung's announcements come at a time when AI demand for memory chips remains exceptionally strong. The company disclosed last week that long-term agreements with customers could eventually account for 60% to 70% of its memory sales.
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Citi analysts noted that inventories across both DRAM and NAND supply chains remained well below historical levels despite concerns over softening end-market demand.2
Alongside SK Hynix, Samsung controls the majority of memory production. Both companies are struggling to keep up with demand created by AI infrastructure expansion, leading to elevated prices for electronics ranging from gaming consoles to smartphones to laptops.
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While Samsung's new technologies look impressive, most of the production capacity will likely be allocated to AI data centers rather than consumer applications.3
Samsung also presented its broader AI memory roadmap at FMS 2026, including HBM4E, HBM5, LPDDR5X-PIM, and PM1763 enterprise storage solutions.
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The company began mass production of HBM4 using its 1c DRAM and 4-nanometer base die technologies in February and was first to ship HBM4E samples to global customers in May.5
Samsung hasn't disclosed specific timeframes for when zHBM will be available, though comparisons to HBM5 suggest commercialization in the late 2020s or early 2030s.1
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