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Micron Unveils 12-High HBM3E Memory with 36 GB Capacity and 1.2 TB/s Bandwidth
As AI workloads become more demanding, the need for higher memory bandwidth and capacity grows. Micron is addressing this challenge by shipping its HBM3E 12-high 36 GB memory for qualification across the AI ecosystem. The 12-high stack provides 50% more capacity compared to the 8-high offerings,
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Micron's HBM3E Memory Boosts Capacities Up To 36 GB With 12-Hi Design, 9.2 Gbps Speeds, 1.2 TB/s Bandwidth
Micron has started sampling its "production-ready" HBM3E memory solution which features up to 36 GB capacities in a 12-Hi design. Press Release: Micron is at the forefront of memory innovation to meet these needs and is now shipping production-capable HBM3E 12-high to key industry partners for
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Micron samples 12-Hi HBM3E with up to 36GB capacity: 9.2Gbps speeds, 1.2TB/sec memory bandwidth
Micron has just announced its shipping production-capable HBM3E 12-Hi memory in up to 36GB capacities, pushing 1.2TB/sec of memory bandwidth ready for AI GPUs. The new Micron HBM3E 12-Hi features an impressive 36GB capacity, which is a 50% increase over current HBM3E 8-Hi stacks, allowing far
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Micron Technology has introduced its latest High Bandwidth Memory (HBM) solution, the HBM3E, featuring unprecedented capacity and bandwidth. This advancement promises significant improvements for AI and high-performance computing applications.

Micron Technology, a leader in innovative memory solutions, has announced its latest breakthrough in High Bandwidth Memory (HBM) technology. The new HBM3E memory stack represents a significant advancement in capacity, speed, and bandwidth, positioning itself at the forefront of memory solutions for artificial intelligence (AI) and high-performance computing (HPC) applications
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.The HBM3E memory stack boasts an impressive 36GB capacity, achieved through a 12-High (12-Hi) configuration. This substantial increase in capacity is complemented by speeds of up to 9.2 Gbps, resulting in a remarkable bandwidth of 1.2 TB/s per package
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. These specifications represent a significant leap forward in memory technology, offering 50% more capacity and 50% higher bandwidth compared to the previous generation.Micron's HBM3E utilizes advanced packaging technology, including Through-Silicon Vias (TSVs) and microbumps. The 12-Hi stack configuration allows for increased density without compromising performance. The memory is built on Micron's 1β (1-beta) process node, which contributes to its enhanced capabilities and efficiency
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.The introduction of HBM3E is particularly significant for the AI and HPC sectors. With the increasing complexity of AI models and the growing demand for high-performance computing, the need for faster, higher-capacity memory solutions has never been more critical. Micron's HBM3E addresses these needs by providing:
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Micron is currently sampling its HBM3E memory to select partners, with plans for broader availability in the near future. The company is working closely with ecosystem partners to ensure seamless integration of the new memory technology into next-generation computing systems
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.The introduction of HBM3E sets a new benchmark in the memory industry. As AI and HPC continue to evolve, technologies like Micron's HBM3E will play a crucial role in enabling more sophisticated and powerful computing solutions. The advancements in capacity and bandwidth are expected to drive innovation across various sectors, from scientific research to consumer electronics.
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